VS-30CPU04PBF, vs-30cpu04-n3 www.vishay.com vishay semiconductors revision: 26-jun-12 1 document number: 94013 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ultrafast rectifier, 2 x 15 a fred pt ? features ? ultrafast recovery time ? low forward voltage drop ? 175 c operating junction temperature ? low leakage current ? designed and qualified according to jedec-jesd47 ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 description/application fred pt ? series are the state of the art ultrafast recovery rectifiers specifically design ed with optimized performance of forward voltage drop and ultrafast recovery time. the planar structure and th e platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics. these devices are intended for use in the output rectification stage of smps, ups, dc/dc converters as well as freewheeling diodes in low voltage inverters and chopper motor drives. their extremely optimized stored charge and low recovery current minimize the switch ing losses and reduce over dissipation in the switch ing element and snubbers. product summary package to-247ac i f(av) 2 x 15 a v r 400 v v f at i f 1.25 v t rr typ. see recovery table t j max. 175 c diode variation common cathode base common cathode common cathode 2 2 13 anode 1 anode 2 to-247ac absolute maximum ratings parameter symbol test conditions values units peak repetitive reverse voltage v rrm 400 v average rectified forward current per leg i f(av) 15 a total device rated v r , t c = 149 c 30 non-repetitive peak surge current per leg i fsm t c = 25 c 200 peak repetitive forw ard current per leg i frm rated v r , t c = 149 c, square wave, 20 khz 30 operating junction and storage temperatures t j , t stg - 65 to 175 c electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditio ns min. typ. max. units breakdown voltage, blocking voltage v br , v r i r = 100 a 400 - - v forward voltage v f i f = 15 a - 1.17 1.25 i f = 15 a, t j = 150 c - 0.93 1.12 reverse leakage current i r v r = v r rated - 0.3 10 a t j = 150 c, v r = v r rated - 30 500 junction capacitance c t v r = 400 v - 28 - pf series inductance l s measured lead to lead 5 mm from package body - 12 - nh
VS-30CPU04PBF, vs-30cpu04-n3 www.vishay.com vishay semiconductors revision: 26-jun-12 2 document number: 94013 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dynamic recovery characteristics (t j = 25 c unless otherwise specified) parameter symbol test condition s min. typ. max. units reverse recovery time t rr i f = 1 a, di f /dt = 50 a/s, v r = 30 v - 36 60 ns t j = 25 c i f = 15 a di f /dt = 200 a/s v r = 200 v -46- t j = 125 c - 80 - peak recovery current i rrm t j = 25 c - 3.6 - a t j = 125 c - 8.7 - reverse recovery charge q rr t j = 25 c - 84 - nc t j = 125 c - 345 - thermal - mechanical specifications parameter symbol test condit ions min. typ. max. units maximum junction and storage temperature range t j , t stg - 65 - 175 c thermal resistance, junction to case per leg r thjc -0.81.5 c/w thermal resistance, junction to ambient per leg r thja typical socket mount - - 40 thermal resistance, case to heatsink r thcs mounting surface, flat, smooth and greased -0.4- weight -6.0- g -0.21- oz. mounting torque 6.0 (5.0) - 12 (10) kgf cm (lbf in) marking device case style to-247ac 30cpu04
VS-30CPU04PBF, vs-30cpu04-n3 www.vishay.com vishay semiconductors revision: 26-jun-12 3 document number: 94013 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - typical forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction ca pacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics 0.1 10 100 0.2 0.6 2.0 1.4 1.0 1.8 v f - forward voltage drop (v) i f - instantaneous forward current (a) 1.6 1.2 0.8 t j = 175 c t j = 150 c t j = 25 c 1 0.4 0.01 0.1 1 10 1000 0 100 200 300 400 0.0001 v r - reverse voltage (v) i r - reverse current (a) t j = 175 c t j = 150 c t j = 125 c t j = 100 c t j = 25 c 0.001 100 100 1000 0 100 200 300 400 10 v r - reverse voltage (v) c t - junction capacitance (pf) t j = 25 c 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 t 1 - rectangular pulse duration (s) z thjc - thermal impedance (c/w) single pulse (thermal resistance) . . p dm t 1 t 2 notes: 1. duty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c 100 1 10 d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01
VS-30CPU04PBF, vs-30cpu04-n3 www.vishay.com vishay semiconductors revision: 26-jun-12 4 document number: 94013 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward power loss characteristics fig. 7 - typical reverse recovery time vs. di f /dt fig. 8 - typical stored charge vs. di f /dt note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = rated v r see note (1) square wave (d = 0.50) rated v r applied dc 05 25 20 15 10 180 170 150 140 130 i f(av) - average forward current (a) allowable case temperature (c) 160 d = 0.01 d = 0.02 d = 0.05 d = 0.1 d = 0.2 d = 0.5 05 25 20 10 25 20 15 10 0 i f(av) - average forward current (a) 15 average power loss (w) 5 rms limit dc i f = 30 a i f = 16 a i f = 8 a 100 10 100 1000 t rr (ns) di f /dt (a/s) 40 60 80 90 30 20 50 70 v r = 200 v t j = 125 c t j = 25 c i f = 30 a i f = 16 a i f = 8 a 1000 10 100 1000 q rr (nc) di f /dt (a/s) 100 v r = 200 v t j = 125 c t j = 25 c
VS-30CPU04PBF, vs-30cpu04-n3 www.vishay.com vishay semiconductors revision: 26-jun-12 5 document number: 94013 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 9 - reverse recovery parameter test circuit fig. 10 - reverse recovery waveform and definitions irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adju s t q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve defined by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr
VS-30CPU04PBF, vs-30cpu04-n3 www.vishay.com vishay semiconductors revision: 26-jun-12 6 document number: 94013 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table ordering information (example) preferred p/n quantity per t/r minimum order quantity packaging description VS-30CPU04PBF 25 500 antistatic plastic tube vs-30cpu04-n3 25 500 antistatic plastic tube links to related documents dimensions www.vishay.com/doc?95223 part marking information to-247acpbf www.vishay.com/doc?95226 to-247ac-n3 www.vishay.com/doc?95007 2 - current rating (30 = 30 a) 3 - circuit configuration: c = common cathode 4 - to-247ac 4 5 - ultrafast recovery 6 - voltage rating (04 = 400 v) 1 - vishay semiconductors product 7 device code 5 1 3 2 4 6 7 vs- 30 c p u 04 pbf - environmental digit: pbf = lead (pb)-free and rohs compliant -n3 = halogen-free, rohs compliant and totally lead (pb)-free
outline dimensions www.vishay.com vishay semiconductors revision: 16-jun-11 1 document number: 95223 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dimensions in millimeters and inches notes (1) dimensioning and tolera ncing per asme y14.5m-1994 (2) contour of slot optional (3) dimension d and e do not include mold flas h. mold flash shall not exceed 0.127 mm (0 .005") per side. these dimensions are measu red at the outermost extremes of the plastic body (4) thermal pad contour optional with dimensions d1 and e1 (5) lead finish uncontrolled in l1 (6) ? p to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) outline conforms to jede c outline to-247 with ex ception of dimension c symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.65 5.31 0.183 0.209 d2 0.51 1.30 0.020 0.051 a1 2.21 2.59 0.087 0.102 e 15.29 15.87 0.602 0.625 3 a2 1.50 2.49 0.059 0.098 e1 13.72 - 0.540 - b 0.99 1.40 0.039 0.055 e 5.46 bsc 0.215 bsc b1 0.99 1.35 0.039 0.053 fk 2.54 0.010 b2 1.65 2.39 0.065 0.094 l 14.20 16.10 0.559 0.634 b3 1.65 2.37 0.065 0.094 l1 3.71 4.29 0.146 0.169 b4 2.59 3.43 0.102 0.135 n 7.62 bsc 0.3 b5 2.59 3.38 0.102 0.133 ? p 3.56 3.66 0.14 0.144 c 0.38 0.86 0.015 0.034 ? p1 - 6.98 - 0.275 c1 0.38 0.76 0.015 0.030 q 5.31 5.69 0.209 0.224 d 19.71 20.70 0.776 0.815 3 r 4.52 5.49 1.78 0.216 d1 13.08 - 0.515 - 4 s 5.51 bsc 0.217 bsc 0.10 a c m m e n (2) (3) (4) (4) (2) r/2 b 2 x r s d see view b 2 x e b4 3 x b 2 x b2 l c (5) l1 1 2 3 q d a a2 a a a1 c ? k b d m m a (6) ? p (datum b) fp1 d1 (4) 4 e1 0.01 b d m m view a - a thermal pad d2 dde e c c view b (b1, b3, b5) base metal c1 (b, b2, b4) section c - c, d - d, e - e (c) planting lead assignments diodes 1. - anode/open 2. - cathode 3. - anode
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